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| Mfr. No: | SIHG050N65SF-GE3 |
| Mfr.: | Vishay Semiconductors |
| Category: | MOSFETs |
| Description: | MOSFETs N-CHANNEL 650V |
| Lifecycle: | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 64A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 52mOhm @ 30A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 212 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 6369 pF @ 100 V |
| FET Feature | - |
| Power Dissipation (Max) | 520W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247AC |
| Package / Case | TO-247-3 |
| Packaging | |
| Standard Pack Qty | 500 |
| Category | MOSFETs |
| RoHS | |
| Lifecycle | New Product |
| Lead Time | 31 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
Vishay Semiconductors's SIHG050N65SF-GE3 is a widely used mosfets part in electronic designs. It features FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 650 V, current, continuous drain (id) @ 25°C: 64A (Tc), drive voltage: 10V and rds on (max) @ id, vgs: 52mOhm @ 30A, 10V. This part has a typical lead time of 31 Days from factory. Simplytronix supplies SIHG050N65SF-GE3 with same-day shipping and guaranteed authenticity.
