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SIHW61N65EF-GE3 Vishay Semiconductors
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SIHW61N65EF-GE3

Mfr. No: SIHW61N65EF-GE3
Mfr.: Vishay Semiconductors
Category: MOSFETs
Description: MOSFETs 650V Vds 30V Vgs TO-247AD
Datasheet: SIHW61N65EF-GE3 Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 64A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 47mOhm @ 30.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 371 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 7407 pF @ 100 V
FET Feature -
Power Dissipation (Max) 520W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-247AD
Package / Case TO-247-3
📦 Product Attributes
Packaging Tube
Standard Pack Qty 480
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
6,680
Units In Stock
📦 Tube
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 0 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
TARIC 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
KRHTS 8541299000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

Manufactured by Vishay Semiconductors, the SIHW61N65EF-GE3 is classified under mosfets. This part is specified with FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 650 V, current, continuous drain (id) @ 25°C: 64A (Tc), drive voltage: 10V and rds on (max) @ id, vgs: 47mOhm @ 30.5A, 10V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Get SIHW61N65EF-GE3 from Simplytronix, shipped same day with a genuine parts guarantee.

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