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| Mfr. No: | SIRA10DDP-T1-UE3 |
| Mfr.: | Vishay Semiconductors |
| Category: | MOSFETs |
| Description: | MOSFETs N-CHANNEL 30-V (D-S) MOSFET |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 33A (Ta), 96A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 3.1mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 36.2 nC @ 10 V |
| Vgs (Max) | +20V, -16V |
| Input Capacitance (Ciss) (Max) @ Vds | 1710 pF @ 15 V |
| Power Dissipation (Max) | 5W (Ta), 43W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® SO-8 |
| Package / Case | PowerPAK® SO-8 |
| Packaging | |
| Standard Pack Qty | 3000 |
| Category | MOSFETs |
| RoHS | |
| Lifecycle | New Product |
| Lead Time | 92 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
Vishay Semiconductors's SIRA10DDP-T1-UE3 is a widely used mosfets part in electronic designs. Notable characteristics of this part include FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 30 V, current, continuous drain (id) @ 25°C: 33A (Ta), 96A (Tc), drive voltage: 4.5V, 10V and rds on (max) @ id, vgs: 3.1mOhm @ 10A, 10V. This part has a typical lead time of 92 Days from factory. Simplytronix supplies SIRA10DDP-T1-UE3 with same-day shipping and guaranteed authenticity.
