| Mfr. No: | SISB46DN-T1-GE3 |
| Mfr.: | Vishay Semiconductors |
| Category: | MOSFETs |
| Description: | MOSFETs 40V Vds 20V Vgs PowerPAK 1212-8 |
| Datasheet: | SISB46DN-T1-GE3 Datasheet (PDF) |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 34A (Tc) |
| Rds On (Max) @ Id, Vgs | 11.71mOhm @ 5A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100pF @ 20V |
| Power - Max | 23W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® 1212-8 Dual |
| Supplier Device Package | PowerPAK® 1212-8 Dual |
| Packaging | Reel |
| Standard Pack Qty | 3000 |
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 245 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| KRHTS | 8541299000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
As a mosfets component, the SISB46DN-T1-GE3 is manufactured and supplied by Vishay Semiconductors. Technical specifications for this part include technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Dual), FET feature: -, drain to source voltage: 40V, current, continuous drain (id) @ 25°C: 34A (Tc) and rds on (max) @ id, vgs: 11.71mOhm @ 5A, 10V. This part has a typical lead time of 245 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries SISB46DN-T1-GE3 in stock, backed by a genuine parts guarantee and quick dispatch.