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| Mfr. No: | SIZF4412DT-T1-GE3 |
| Mfr.: | Vishay Semiconductors |
| Category: | MOSFETs |
| Description: | MOSFETs DUAL N-CHANNEL 40-V (D-S) MOSFET |
| Lifecycle: | Active |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Half Bridge) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 21.6A (Ta), 77.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.3mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 26.5nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1380pF @ 20V |
| Power - Max | 4.5W (Ta), 56.8W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Package / Case | 12-PowerPair™ |
| Supplier Device Package | PowerPAIR® 3 x 3FS |
| Packaging | |
| Standard Pack Qty | 3000 |
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 53 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
Vishay Semiconductors's SIZF4412DT-T1-GE3 is a widely used mosfets part in electronic designs. This component is defined by technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Half Bridge), FET feature: -, drain to source voltage: 40V, current, continuous drain (id) @ 25°C: 21.6A (Ta), 77.1A (Tc) and rds on (max) @ id, vgs: 5.3mOhm @ 10A, 10V. This part has a typical lead time of 53 Days from factory. Simplytronix supplies SIZF4412DT-T1-GE3 with same-day shipping and guaranteed authenticity.
