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SQ1470AEH-T1_GE3 Vishay Semiconductors
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SQ1470AEH-T1_GE3

Mfr. No: SQ1470AEH-T1_GE3
Mfr.: Vishay Semiconductors
Category: MOSFETs
Description: MOSFETs 30V Vds +/-12V Vgs AEC-Q101 Qualified
Lifecycle: Active
⚙ Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 65mOhm @ 4.2A, 4.5V
Vgs(th) (Max) @ Id 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5.2 nC @ 4.5 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 450 pF @ 15 V
FET Feature -
Power Dissipation (Max) 3.3W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package SC-70-6
Package / Case 6-TSSOP, SC-88, SOT-363
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
5,312
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 0 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541210000
MXHTS 85412999
ECCN EAR99
ℹ Product Overview

Vishay Semiconductors manufactures the SQ1470AEH-T1_GE3, a mosfets part used in electronic assemblies. Among its key specs are FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 30 V, current, continuous drain (id) @ 25°C: 1.7A (Tc), drive voltage: 2.5V, 4.5V and rds on (max) @ id, vgs: 65mOhm @ 4.2A, 4.5V. This part has a typical lead time of 0 Days from factory. You can source SQ1470AEH-T1_GE3 through Simplytronix, with fast shipping and verified authenticity.

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