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SQA602CEJW-T1_GE3 Vishay Semiconductors
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SQA602CEJW-T1_GE3

Mfr. No: SQA602CEJW-T1_GE3
Mfr.: Vishay Semiconductors
Category: MOSFETs
Description: MOSFETs N-CHANNEL 80-V (D-S) 175C MOSFET
Lifecycle: Active
⚙ Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 5.63A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 94mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.2 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 355 pF @ 25 V
Power Dissipation (Max) 13.6W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount, Wettable Flank
Supplier Device Package PowerPAK®SC-70W-6
Package / Case PowerPAK® SC-70-6
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
1,973
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 65 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

SQA602CEJW-T1_GE3 is a mosfets part produced by Vishay Semiconductors for use across a range of applications. This component is defined by FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 80 V, current, continuous drain (id) @ 25°C: 5.63A (Tc), drive voltage: 4.5V, 10V and rds on (max) @ id, vgs: 94mOhm @ 3A, 10V. This part has a typical lead time of 65 Days from factory. Order SQA602CEJW-T1_GE3 from Simplytronix for authenticated stock and same-day order processing.

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