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SQJ200EP-T1_JE3

Mfr. No: SQJ200EP-T1_JE3
Mfr.: Vishay Semiconductors
Category: MOSFETs
Description: MOSFETs DUAL N-CHANNEL 20-V (D-S) 175C MOSFET
Datasheet: SQJ200EP-T1_JE3 Datasheet (PDF)
⚙ Specifications
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature -
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 20A (Tc), 60A (Tc)
Rds On (Max) @ Id, Vgs 8.8mOhm @ 16A, 10V, 3.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 43nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 975pF @ 10V, 2525pF @ 10V
Power - Max 27W (Tc), 48W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8 Dual
Supplier Device Package PowerPAK® SO-8 Dual
📦 Product Attributes
Packaging
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
4,851
Units In Stock
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 55 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

The SQJ200EP-T1_JE3, made by Vishay Semiconductors, belongs to the mosfets product category. Among its key specs are technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Dual), FET feature: -, drain to source voltage: 20V, current, continuous drain (id) @ 25°C: 20A (Tc), 60A (Tc) and rds on (max) @ id, vgs: 8.8mOhm @ 16A, 10V, 3.7mOhm @ 20A, 10V. This part has a typical lead time of 55 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks SQJ200EP-T1_JE3 for same-day shipping with genuine parts guaranteed.

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