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SQJ407EP-T1_GE3 Vishay Semiconductors
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SQJ407EP-T1_GE3

Mfr. No: SQJ407EP-T1_GE3
Mfr.: Vishay Semiconductors
Category: MOSFETs
Description: MOSFETs -30V Vds PowerPAK AEC-Q101 Qualified
Datasheet: SQJ407EP-T1_GE3 Datasheet (PDF)
⚙ Specifications
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.4mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 260 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 10700 pF @ 25 V
FET Feature -
Power Dissipation (Max) 68W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging SQJ407EP-T1_BE3
Suggested Replacement SQJ407EP-T1_BE3
13,968
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 0 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541100090
USHTS 8541290065
JPHTS 854110090
KRHTS 8541109000
TARIC 8541100000
MXHTS 8541100101
ECCN EAR99
ℹ Product Overview

The SQJ407EP-T1_GE3, made by Vishay Semiconductors, belongs to the mosfets product category. It features FET type: P-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 30 V, current, continuous drain (id) @ 25°C: 60A (Tc), drive voltage: 4.5V, 10V and rds on (max) @ id, vgs: 4.4mOhm @ 10A, 10V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks SQJ407EP-T1_GE3 for same-day shipping with genuine parts guaranteed.

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