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SQJ960EP-T1_GE3 Vishay Semiconductors
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SQJ960EP-T1_GE3

Mfr. No: SQJ960EP-T1_GE3
Mfr.: Vishay Semiconductors
Category: MOSFETs
Description: MOSFETs 60V 8A 34W AEC-Q101 Qualified
Datasheet: SQJ960EP-T1_GE3 Datasheet (PDF)
⚙ Specifications
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 8A
Rds On (Max) @ Id, Vgs 36mOhm @ 5.3A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 735pF @ 25V
Power - Max 34W
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8 Dual
Supplier Device Package PowerPAK® SO-8 Dual
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
9,372
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 0 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
ℹ Product Overview

Vishay Semiconductors manufactures the SQJ960EP-T1_GE3, a mosfets part used in electronic assemblies. Among its key specs are technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Dual), FET feature: Logic Level Gate, drain to source voltage: 60V, current, continuous drain (id) @ 25°C: 8A and rds on (max) @ id, vgs: 36mOhm @ 5.3A, 10V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. You can source SQJ960EP-T1_GE3 through Simplytronix, with fast shipping and verified authenticity.

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