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SQUN702E-T1_GE3 Vishay Semiconductors
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SQUN702E-T1_GE3

Mfr. No: SQUN702E-T1_GE3
Mfr.: Vishay Semiconductors
Category: MOSFETs
Description: MOSFETs 40-V N- & P-CH COMMON DRAIN + 200-V
Datasheet: SQUN702E-T1_GE3 Datasheet (PDF)
⚙ Specifications
Technology MOSFET (Metal Oxide)
Configuration N and P-Channel, Common Drain
FET Feature -
Drain to Source Voltage (Vdss) 40V, 200V
Current - Continuous Drain (Id) @ 25°C 30A (Tc), 20A (Tc)
Rds On (Max) @ Id, Vgs 9.2mOhm @ 9.8A, 10V, 60mOhm @ 5A, 10V, 30mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA, 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 23nC @ 20V, 14nC @ 20V, 30.2nC @ 100V
Input Capacitance (Ciss) (Max) @ Vds 1474pF @ 20V, 1450pF @ 20V, 1302pF @ 100V
Power - Max 48W (Tc), 60W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount, Wettable Flank
Package / Case Die
Supplier Device Package Die
📦 Product Attributes
Packaging Reel
Standard Pack Qty 2000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
8,141
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 0 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
USHTS 8541290065
TARIC 8541290000
ECCN EAR99
ℹ Product Overview

Vishay Semiconductors manufactures the SQUN702E-T1_GE3, a mosfets part used in electronic assemblies. It features technology: MOSFET (Metal Oxide), configuration: N and P-Channel, Common Drain, FET feature: -, drain to source voltage: 40V, 200V, current, continuous drain (id) @ 25°C: 30A (Tc), 20A (Tc) and rds on (max) @ id, vgs: 9.2mOhm @ 9.8A, 10V, 60mOhm @ 5A, 10V, 30mOhm @ 6A, 10V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. You can source SQUN702E-T1_GE3 through Simplytronix, with fast shipping and verified authenticity.

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