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IRF610PBF Vishay Semiconductors
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IRF610PBF

Mfr. No: IRF610PBF
Mfr.: Vishay Semiconductors
Category: MOSFETs
Description: MOSFETs TO220 200V 3.3A N-CH MOSFET
Lifecycle: Active
⚙ Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 3.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.5Ohm @ 2A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.2 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 140 pF @ 25 V
FET Feature -
Power Dissipation (Max) 36W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
📦 Product Attributes
Packaging Tube
Standard Pack Qty 1000
🔁 Alternate / Replacement Parts
Alternate Packaging IRF610PBF-BE3
Suggested Replacement IRF610PBF-BE3
7,617
Units In Stock
📦 Tube
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 185 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
TARIC 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
KRHTS 8541299000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

As a mosfets component, the IRF610PBF is manufactured and supplied by Vishay Semiconductors. It features FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 200 V, current, continuous drain (id) @ 25°C: 3.3A (Tc), drive voltage: 10V and rds on (max) @ id, vgs: 1.5Ohm @ 2A, 10V. This part has a typical lead time of 185 Days from factory. Simplytronix carries IRF610PBF in stock, backed by a genuine parts guarantee and quick dispatch.

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