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IRFL9110TRPBF Vishay Semiconductors
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IRFL9110TRPBF

Mfr. No: IRFL9110TRPBF
Mfr.: Vishay Semiconductors
Category: MOSFETs
Description: MOSFETs P-Chan 100V 1.1 Amp
Lifecycle: Active
⚙ Specifications
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 1.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.2Ohm @ 660mA, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.7 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 200 pF @ 25 V
FET Feature -
Power Dissipation (Max) 2W (Ta), 3.1W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package SOT-223
Package / Case TO-261-4, TO-261AA
📦 Product Attributes
Packaging Reel
Standard Pack Qty 2500
🔁 Alternate / Replacement Parts
Alternate Packaging IRFL9110TRPBF-BE3
Suggested Replacement IRFL9110TRPBF-BE3
12,160
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant By Exemption
Lifecycle
Lead Time 0 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
TARIC 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
KRHTS 8541299000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

Vishay Semiconductors manufactures the IRFL9110TRPBF, a mosfets part used in electronic assemblies. Key specifications include FET type: P-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 100 V, current, continuous drain (id) @ 25°C: 1.1A (Tc), drive voltage: 10V and rds on (max) @ id, vgs: 1.2Ohm @ 660mA, 10V. This part has a typical lead time of 0 Days from factory. You can source IRFL9110TRPBF through Simplytronix, with fast shipping and verified authenticity.

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