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IRFR010PBF Vishay Semiconductors
*For representation only.

IRFR010PBF

Mfr. No: IRFR010PBF
Mfr.: Vishay Semiconductors
Category: MOSFETs
Description: MOSFETs TO252 N-CH 50V 8.2A
Lifecycle: Active
⚙ Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 50 V
Current - Continuous Drain (Id) @ 25°C 8.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 200mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 250 pF @ 25 V
FET Feature -
Power Dissipation (Max) 25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package DPAK
Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
📦 Product Attributes
Packaging Tube
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging IRFR010PBF-BE3
Suggested Replacement IRFR010PBF-BE3
5,993
Units In Stock
📦 Tube
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant By Exemption
Lifecycle
Lead Time 0 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
TARIC 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
KRHTS 8541299000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

Manufactured by Vishay Semiconductors, the IRFR010PBF is classified under mosfets. This part is specified with FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 50 V, current, continuous drain (id) @ 25°C: 8.2A (Tc), drive voltage: 10V and rds on (max) @ id, vgs: 200mOhm @ 4.6A, 10V. This part has a typical lead time of 0 Days from factory. Get IRFR010PBF from Simplytronix, shipped same day with a genuine parts guarantee.

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