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SI2302CDS-T1-GE3 Vishay Semiconductors
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SI2302CDS-T1-GE3

Mfr. No: SI2302CDS-T1-GE3
Mfr.: Vishay Semiconductors
Category: MOSFETs
Description: MOSFETs 20V Vds 8V Vgs SOT-23
Datasheet: SI2302CDS-T1-GE3 Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 57mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id 850mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5.5 nC @ 4.5 V
Vgs (Max) ±8V
FET Feature -
Power Dissipation (Max) 710mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging SI2302CDS-T1-BE3
Suggested Replacement SI2302CDS-T1-BE3
7,581
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 0 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541210000
TARIC 8541210000
CAHTS 8541210000
USHTS 8541210095
JPHTS 854121000
KRHTS 8541219000
MXHTS 8541210100
ECCN EAR99
ℹ Product Overview

The SI2302CDS-T1-GE3 from Vishay Semiconductors falls under the mosfets category. Among its key specs are FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 20 V, current, continuous drain (id) @ 25°C: 2.6A (Ta), drive voltage: 2.5V, 4.5V and rds on (max) @ id, vgs: 57mOhm @ 3.6A, 4.5V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. SI2302CDS-T1-GE3 is available through Simplytronix, sourced and verified for authenticity.

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