| Mfr. No: | GAP3SLT33-214 |
| Mfr.: | GeneSiC Semiconductor |
| Category: | SiC Schottky Diodes |
| Description: | SiC Schottky Diodes 3300V - 0.3 A SiC Schottky Rectifier |
| Lifecycle: | Active |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 3300 V |
| Current - Average Rectified (Io) | 300mA |
| Voltage - Forward (Vf) (Max) @ If | 2.2 V @ 300 mA |
| Speed | Zero Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 10 µA @ 3300 V |
| Capacitance @ Vr, F | 42pF @ 1V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | DO-214AA, SMB |
| Supplier Device Package | DO-214AA |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Packaging | Reel |
| Standard Pack Qty | 3000 |
| Category | SiC Schottky Diodes |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 154 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541100000 |
| CAHTS | 8541100090 |
| USHTS | 8541100070 |
| JPHTS | 854110090 |
| KRHTS | 8541109000 |
| TARIC | 8541100000 |
| MXHTS | 8541100101 |
| ECCN | EAR99 |
The GAP3SLT33-214 from GeneSiC Semiconductor falls under the sic schottky diodes category. Among its key specs are technology: SiC (Silicon Carbide) Schottky, voltage, DC reverse (vr): 3300 V, current, average rectified: 300mA, voltage, forward (vf) (max) @ if: 2.2 V @ 300 mA, speed: Zero Recovery Time > 500mA (Io) and reverse recovery time: 0 ns. This part has a typical lead time of 154 Days from factory. GAP3SLT33-214 is available through Simplytronix, sourced and verified for authenticity.