| Mfr. No: | GE04MPS06E-TR |
| Mfr.: | GeneSiC Semiconductor |
| Category: | SiC Schottky Diodes |
| Description: | SiC Schottky Diodes 650V 4A TO-252-2 SiC Schottky MPS |
| Lifecycle: | Active |
| Datasheet: | GE04MPS06E-TR Datasheet (PDF) |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 12A |
| Voltage - Forward (Vf) (Max) @ If | 1.35 V @ 4 A |
| Speed | Zero Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 5 µA @ 650 V |
| Capacitance @ Vr, F | 186pF @ 1V, 1MHz |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Supplier Device Package | TO-252-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Packaging | Reel |
| Standard Pack Qty | 2500 |
| Category | SiC Schottky Diodes |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 154 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541100000 |
| CAHTS | 8541100090 |
| USHTS | 8541100080 |
| TARIC | 8541100000 |
| ECCN | EAR99 |
GE04MPS06E-TR is a sic schottky diodes part produced by GeneSiC Semiconductor for use across a range of applications. It features technology: SiC (Silicon Carbide) Schottky, voltage, DC reverse (vr): 650 V, current, average rectified: 12A, voltage, forward (vf) (max) @ if: 1.35 V @ 4 A, speed: Zero Recovery Time > 500mA (Io) and reverse recovery time: 0 ns. This part has a typical lead time of 154 Days from factory and ships with a full manufacturer datasheet available for download. Order GE04MPS06E-TR from Simplytronix for authenticated stock and same-day order processing.