*For representation only.
GD10MPS12H
| Mfr. No: | GD10MPS12H |
| Mfr.: | GeneSiC Semiconductor |
| Category: | SiC Schottky Diodes |
| Description: | SiC Schottky Diodes 1200V 10A TO-247-2 SiC Schottky MPS |
| Lifecycle: | Obsolete |
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Specifications
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Current - Average Rectified (Io) | 10A |
| Speed | Zero Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Capacitance @ Vr, F | - |
| Mounting Type | Through Hole |
| Package / Case | TO-247-2 |
| Supplier Device Package | TO-247-2 |
| Operating Temperature - Junction | 175°C |
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Product Attributes
| Packaging | Tube |
| Standard Pack Qty | 30 |
10,551
Units In Stock
📦 Tube
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | SiC Schottky Diodes |
| RoHS | RoHS Compliant |
| Lifecycle | End of Life |
| Lead Time | 0 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CAHTS | 8541100090 |
| USHTS | 8541100080 |
| JPHTS | 854110090 |
| KRHTS | 8541109000 |
| TARIC | 8541100000 |
| MXHTS | 8541100101 |
| BRHTS | 85411099 |
| ECCN | EAR99 |
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Product Overview
The GD10MPS12H from GeneSiC Semiconductor falls under the sic schottky diodes category. Among its key specs are technology: SiC (Silicon Carbide) Schottky, voltage, DC reverse (vr): 1200 V, current, average rectified: 10A, speed: Zero Recovery Time > 500mA (Io), reverse recovery time: 0 ns and capacitance @ vr, F: -. This part has a typical lead time of 0 Days from factory. GD10MPS12H is available through Simplytronix, sourced and verified for authenticity.
