*For representation only.
GD2X100MPS12N
| Mfr. No: | GD2X100MPS12N |
| Mfr.: | GeneSiC Semiconductor |
| Category: | SiC Schottky Diodes |
| Description: | SiC Schottky Diodes 1200V 200A SOT-227 SiC Schottky MPS |
| Lifecycle: | Active |
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Specifications
| Diode Configuration | 2 Independent |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Current - Average Rectified (Io) (per Diode) | 136A (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 100 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 25 µA @ 1200 V |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Mounting Type | Chassis Mount |
| Package / Case | SOT-227-4, miniBLOC |
| Supplier Device Package | SOT-227 |
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Product Attributes
| Packaging | Tube |
| Standard Pack Qty | 10 |
14,271
Units In Stock
📦 Tube
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | SiC Schottky Diodes |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 154 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541100000 |
| CAHTS | 8541100090 |
| USHTS | 8541100080 |
| JPHTS | 854110090 |
| KRHTS | 8541109000 |
| TARIC | 8541100000 |
| MXHTS | 8541100199 |
| BRHTS | 85411099 |
| ECCN | EAR99 |
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Product Overview
GeneSiC Semiconductor manufactures the GD2X100MPS12N, a sic schottky diodes part used in electronic assemblies. This part is specified with diode configuration: 2 Independent, technology: SiC (Silicon Carbide) Schottky, voltage, DC reverse (vr): 1200 V, current, average rectified (io): 136A (DC), voltage, forward (vf) (max) @ if: 1.8 V @ 100 A and speed: No Recovery Time > 500mA (Io). This part has a typical lead time of 154 Days from factory. You can source GD2X100MPS12N through Simplytronix, with fast shipping and verified authenticity.
