| Mfr. No: | GD60MPS06H |
| Mfr.: | GeneSiC Semiconductor |
| Category: | SiC Schottky Diodes |
| Description: | SiC Schottky Diodes 650V 60A TO-247-2 SiC Schottky MPS |
| Lifecycle: | Obsolete |
| Datasheet: | GD60MPS06H Datasheet (PDF) |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 82A |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 60 A |
| Speed | Zero Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 10 µA @ 650 V |
| Capacitance @ Vr, F | 1463pF @ 1V, 1MHz |
| Mounting Type | Through Hole |
| Package / Case | TO-247-2 |
| Supplier Device Package | TO-247-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Packaging | Tube |
| Standard Pack Qty | 30 |
| Category | SiC Schottky Diodes |
| RoHS | RoHS Compliant |
| Lifecycle | End of Life |
| Lead Time | 0 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541100000 |
| CAHTS | 8541100090 |
| USHTS | 8541100080 |
| TARIC | 8541100000 |
| ECCN | EAR99 |
The GD60MPS06H from GeneSiC Semiconductor falls under the sic schottky diodes category. This component is defined by technology: SiC (Silicon Carbide) Schottky, voltage, DC reverse (vr): 650 V, current, average rectified: 82A, voltage, forward (vf) (max) @ if: 1.8 V @ 60 A, speed: Zero Recovery Time > 500mA (Io) and reverse recovery time: 0 ns. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. GD60MPS06H is available through Simplytronix, sourced and verified for authenticity.