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BF771E6327HTSA1 Infineon Technologies
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BF771E6327HTSA1

Mfr. No: BF771E6327HTSA1
Mfr.: Infineon Technologies
Category: RF Bipolar Transistors
Description: RF Bipolar Transistors NPN RF Transistor 12V 80mA 580mW
Lifecycle: Last Time Buy
Datasheet: BF771E6327HTSA1 Datasheet (PDF)
⚙ Specifications
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 12V
Frequency - Transition 8GHz
Noise Figure (dB Typ @ f) 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Gain 10dB ~ 15dB
Power - Max 580mW
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 30mA, 8V
Current - Collector (Ic) (Max) 80mA
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package PG-SOT23
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging BF 771 E6327
Suggested Replacement
8,655
Units In Stock
📦 Reel
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🔑 Key Specifications
Category RF Bipolar Transistors
RoHS RoHS Compliant
Lifecycle End of Life
Lead Time 210 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541210000
CAHTS 8541290000
USHTS 8541210075
JPHTS 8541290100
KRHTS 8541219000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
ℹ Product Overview

The BF771E6327HTSA1 from Infineon Technologies falls under the rf bipolar transistors category. Key specifications include transistor type: NPN, voltage, collector emitter breakdown: 12V, frequency, transition: 8GHz, noise figure: 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz, gain: 10dB ~ 15dB and power, max: 580mW. This part has a typical lead time of 210 Days from factory and ships with a full manufacturer datasheet available for download. BF771E6327HTSA1 is available through Simplytronix, sourced and verified for authenticity.

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