| Mfr. No: | BFP196E6327HTSA1 |
| Mfr.: | Infineon Technologies |
| Category: | RF Bipolar Transistors |
| Description: | RF Bipolar Transistors NPN Silicon RF TRANSISTOR |
| Lifecycle: | Last Time Buy |
| Datasheet: | BFP196E6327HTSA1 Datasheet (PDF) |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| Frequency - Transition | 7.5GHz |
| Noise Figure (dB Typ @ f) | 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz |
| Gain | 10.5dB ~ 16.5dB |
| Power - Max | 700mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 50mA, 8V |
| Current - Collector (Ic) (Max) | 150mA |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-253-4, TO-253AA |
| Supplier Device Package | PG-SOT-143-3D |
| Packaging | Reel |
| Standard Pack Qty | 3000 |
| Alternate Packaging | BFP 196 E6327 |
| Suggested Replacement | BFP196E6327 |
| Category | RF Bipolar Transistors |
| RoHS | RoHS Compliant |
| Lifecycle | End of Life |
| Lead Time | 273 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541210000 |
| CAHTS | 8541290000 |
| USHTS | 8541210075 |
| JPHTS | 8541290100 |
| KRHTS | 8541219000 |
| TARIC | 8541290000 |
| MXHTS | 85412999 |
| ECCN | EAR99 |
The BFP196E6327HTSA1 from Infineon Technologies falls under the rf bipolar transistors category. Technical specifications for this part include transistor type: NPN, voltage, collector emitter breakdown: 12V, frequency, transition: 7.5GHz, noise figure: 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz, gain: 10.5dB ~ 16.5dB and power, max: 700mW. This part has a typical lead time of 273 Days from factory and ships with a full manufacturer datasheet available for download. BFP196E6327HTSA1 is available through Simplytronix, sourced and verified for authenticity.