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BFP196E6327HTSA1 Infineon Technologies
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BFP196E6327HTSA1

Mfr. No: BFP196E6327HTSA1
Mfr.: Infineon Technologies
Category: RF Bipolar Transistors
Description: RF Bipolar Transistors NPN Silicon RF TRANSISTOR
Lifecycle: Last Time Buy
Datasheet: BFP196E6327HTSA1 Datasheet (PDF)
⚙ Specifications
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 12V
Frequency - Transition 7.5GHz
Noise Figure (dB Typ @ f) 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz
Gain 10.5dB ~ 16.5dB
Power - Max 700mW
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 50mA, 8V
Current - Collector (Ic) (Max) 150mA
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-253-4, TO-253AA
Supplier Device Package PG-SOT-143-3D
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging BFP 196 E6327
Suggested Replacement BFP196E6327
6,254
Units In Stock
📦 Reel
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🔑 Key Specifications
Category RF Bipolar Transistors
RoHS RoHS Compliant
Lifecycle End of Life
Lead Time 273 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541210000
CAHTS 8541290000
USHTS 8541210075
JPHTS 8541290100
KRHTS 8541219000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
ℹ Product Overview

The BFP196E6327HTSA1 from Infineon Technologies falls under the rf bipolar transistors category. Technical specifications for this part include transistor type: NPN, voltage, collector emitter breakdown: 12V, frequency, transition: 7.5GHz, noise figure: 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz, gain: 10.5dB ~ 16.5dB and power, max: 700mW. This part has a typical lead time of 273 Days from factory and ships with a full manufacturer datasheet available for download. BFP196E6327HTSA1 is available through Simplytronix, sourced and verified for authenticity.

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