*For representation only.
BFP196WNH6327XTSA1
| Mfr. No: | BFP196WNH6327XTSA1 |
| Mfr.: | Infineon Technologies |
| Category: | RF Bipolar Transistors |
| Description: | RF Bipolar Transistors RF BIP TRANSISTORS |
| Lifecycle: | Last Time Buy |
| Datasheet: | BFP196WNH6327XTSA1 Datasheet (PDF) |
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Specifications
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| Frequency - Transition | 7.5GHz |
| Noise Figure (dB Typ @ f) | 1.3dB @ 900MHz |
| Gain | 9.7dB |
| Power - Max | 700mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 50mA, 8V |
| Current - Collector (Ic) (Max) | 150mA |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | SC-82A, SOT-343 |
| Supplier Device Package | PG-SOT343-4 |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
10,431
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | RF Bipolar Transistors |
| RoHS | RoHS Compliant |
| Lifecycle | End of Life |
| Lead Time | 182 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541210000 |
| CAHTS | 8541210000 |
| USHTS | 8541210075 |
| JPHTS | 8541210101 |
| KRHTS | 8541219000 |
| TARIC | 8541210000 |
| MXHTS | 85412101 |
| ECCN | EAR99 |
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Product Overview
The BFP196WNH6327XTSA1 from Infineon Technologies falls under the rf bipolar transistors category. This part is specified with transistor type: NPN, voltage, collector emitter breakdown: 12V, frequency, transition: 7.5GHz, noise figure: 1.3dB @ 900MHz, gain: 9.7dB and power, max: 700mW. This part has a typical lead time of 182 Days from factory and ships with a full manufacturer datasheet available for download. BFP196WNH6327XTSA1 is available through Simplytronix, sourced and verified for authenticity.
