| Mfr. No: | BFP640FH6327XTSA1 |
| Mfr.: | Infineon Technologies |
| Category: | RF Bipolar Transistors |
| Description: | RF Bipolar Transistors RF BIP TRANSISTOR |
| Lifecycle: | Last Time Buy |
| Datasheet: | BFP640FH6327XTSA1 Datasheet (PDF) |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 4.5V |
| Frequency - Transition | 40GHz |
| Noise Figure (dB Typ @ f) | 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz |
| Gain | 23dB |
| Power - Max | 200mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 110 @ 30mA, 3V |
| Current - Collector (Ic) (Max) | 50mA |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 4-SMD, Flat Leads |
| Supplier Device Package | 4-TSFP |
| Packaging | Reel |
| Standard Pack Qty | 3000 |
| Alternate Packaging | BFP 640F H6327 |
| Suggested Replacement |
| Category | RF Bipolar Transistors |
| RoHS | RoHS Compliant |
| Lifecycle | End of Life |
| Lead Time | 126 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541210000 |
| CAHTS | 8541290000 |
| USHTS | 8541210075 |
| JPHTS | 8541290100 |
| KRHTS | 8541219000 |
| TARIC | 8541290000 |
| MXHTS | 85412999 |
| ECCN | EAR99 |
As a rf bipolar transistors component, the BFP640FH6327XTSA1 is manufactured and supplied by Infineon Technologies. This component is defined by transistor type: NPN, voltage, collector emitter breakdown: 4.5V, frequency, transition: 40GHz, noise figure: 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz, gain: 23dB and power, max: 200mW. This part has a typical lead time of 126 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries BFP640FH6327XTSA1 in stock, backed by a genuine parts guarantee and quick dispatch.