| Mfr. No: | BFP843H6327XTSA1 |
| Mfr.: | Infineon Technologies |
| Category: | RF Bipolar Transistors |
| Description: | RF Bipolar Transistors RF BIP TRANSISTORS |
| Lifecycle: | Last Time Buy |
| Datasheet: | BFP843H6327XTSA1 Datasheet (PDF) |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 2.25V |
| Frequency - Transition | - |
| Noise Figure (dB Typ @ f) | 0.9dB ~ 1.85dB @ 450MHz ~ 10GHz |
| Gain | 13.5dB ~ 24.5dB |
| Power - Max | 125mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 150 @ 15mA, 1.8V |
| Current - Collector (Ic) (Max) | 55mA |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | SC-82A, SOT-343 |
| Supplier Device Package | PG-SOT343-4-3 |
| Packaging | Reel |
| Standard Pack Qty | 3000 |
| Category | RF Bipolar Transistors |
| RoHS | RoHS Compliant |
| Lifecycle | End of Life |
| Lead Time | 182 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541210000 |
| CAHTS | 8541210000 |
| USHTS | 8541210075 |
| JPHTS | 8541210101 |
| KRHTS | 8541219000 |
| TARIC | 8541210000 |
| MXHTS | 85412101 |
| ECCN | EAR99 |
BFP843H6327XTSA1 is a rf bipolar transistors component manufactured by Infineon Technologies. Key specifications include transistor type: NPN, voltage, collector emitter breakdown: 2.25V, frequency, transition: -, noise figure: 0.9dB ~ 1.85dB @ 450MHz ~ 10GHz, gain: 13.5dB ~ 24.5dB and power, max: 125mW. This part has a typical lead time of 182 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix offers BFP843H6327XTSA1 in stock, verified authentic and ready for same-day dispatch.