| Mfr. No: | BF771E6327HTSA1 |
| Mfr.: | Infineon Technologies |
| Category: | RF Bipolar Transistors |
| Description: | RF Bipolar Transistors NPN RF Transistor 12V 80mA 580mW |
| Lifecycle: | Last Time Buy |
| Datasheet: | BF771E6327HTSA1 Datasheet (PDF) |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| Frequency - Transition | 8GHz |
| Noise Figure (dB Typ @ f) | 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz |
| Gain | 10dB ~ 15dB |
| Power - Max | 580mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 30mA, 8V |
| Current - Collector (Ic) (Max) | 80mA |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | PG-SOT23 |
| Packaging | Reel |
| Standard Pack Qty | 3000 |
| Alternate Packaging | BF 771 E6327 |
| Suggested Replacement |
| Category | RF Bipolar Transistors |
| RoHS | RoHS Compliant |
| Lifecycle | End of Life |
| Lead Time | 210 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541210000 |
| CAHTS | 8541290000 |
| USHTS | 8541210075 |
| JPHTS | 8541290100 |
| KRHTS | 8541219000 |
| TARIC | 8541290000 |
| MXHTS | 85412999 |
| ECCN | EAR99 |
The BF771E6327HTSA1 from Infineon Technologies falls under the rf bipolar transistors category. Key specifications include transistor type: NPN, voltage, collector emitter breakdown: 12V, frequency, transition: 8GHz, noise figure: 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz, gain: 10dB ~ 15dB and power, max: 580mW. This part has a typical lead time of 210 Days from factory and ships with a full manufacturer datasheet available for download. BF771E6327HTSA1 is available through Simplytronix, sourced and verified for authenticity.