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BFP650H6327XTSA1 Infineon Technologies
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BFP650H6327XTSA1

Mfr. No: BFP650H6327XTSA1
Mfr.: Infineon Technologies
Category: RF Bipolar Transistors
Description: RF Bipolar Transistors RF BIP TRANSISTOR
Lifecycle: Last Time Buy
Datasheet: BFP650H6327XTSA1 Datasheet (PDF)
⚙ Specifications
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 4.5V
Frequency - Transition 37GHz
Noise Figure (dB Typ @ f) 0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz
Gain 10.5dB ~ 21.5dB
Power - Max 500mW
DC Current Gain (hFE) (Min) @ Ic, Vce 110 @ 80mA, 3V
Current - Collector (Ic) (Max) 150mA
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case SC-82A, SOT-343
Supplier Device Package PG-SOT343-3D
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging BFP 650 H6327
Suggested Replacement
4,476
Units In Stock
📦 Reel
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🔑 Key Specifications
Category RF Bipolar Transistors
RoHS RoHS Compliant
Lifecycle End of Life
Lead Time 182 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541210000
CAHTS 8541290000
USHTS 8541210075
JPHTS 8541290100
KRHTS 8541219000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
ℹ Product Overview

As a rf bipolar transistors component, the BFP650H6327XTSA1 is manufactured and supplied by Infineon Technologies. This part is specified with transistor type: NPN, voltage, collector emitter breakdown: 4.5V, frequency, transition: 37GHz, noise figure: 0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz, gain: 10.5dB ~ 21.5dB and power, max: 500mW. This part has a typical lead time of 182 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries BFP650H6327XTSA1 in stock, backed by a genuine parts guarantee and quick dispatch.

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