*For representation only.
BFR840L3RHESDE6327XTSA1
| Mfr. No: | BFR840L3RHESDE6327XTSA1 |
| Mfr.: | Infineon Technologies |
| Category: | RF Bipolar Transistors |
| Description: | RF Bipolar Transistors RF BIP TRANSISTORS |
| Datasheet: | BFR840L3RHESDE6327XTSA1 Datasheet (PDF) |
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Specifications
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 2.6V |
| Frequency - Transition | 75GHz |
| Noise Figure (dB Typ @ f) | 0.5dB @ 450MHz |
| Gain | 27dB |
| Power - Max | 75mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 150 @ 10mA, 1.8V |
| Current - Collector (Ic) (Max) | 35mA |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | SC-101, SOT-883 |
| Supplier Device Package | PG-TSLP-3 |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 15000 |
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Alternate / Replacement Parts
| Alternate Packaging | BFR 840L3RHESD E6327 |
| Suggested Replacement |
12,113
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | RF Bipolar Transistors |
| RoHS | RoHS Compliant |
| Lifecycle | End of Life |
| Lead Time | 84 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541210000 |
| CAHTS | 8541290000 |
| USHTS | 8541210075 |
| JPHTS | 8541290100 |
| KRHTS | 8541219000 |
| TARIC | 8541290000 |
| MXHTS | 85412999 |
| ECCN | EAR99 |
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Product Overview
The BFR840L3RHESDE6327XTSA1, made by Infineon Technologies, belongs to the rf bipolar transistors product category. Key specifications include transistor type: NPN, voltage, collector emitter breakdown: 2.6V, frequency, transition: 75GHz, noise figure: 0.5dB @ 450MHz, gain: 27dB and power, max: 75mW. This part has a typical lead time of 84 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks BFR840L3RHESDE6327XTSA1 for same-day shipping with genuine parts guaranteed.
