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| Mfr. No: | IXFN27N120SK |
| Mfr.: | IXYS |
| Category: | SiC MOSFETs |
| Description: | SiC MOSFETs SiCarbide-Discrete MOSFET SOT-227B(mini |
| Lifecycle: | Obsolete |
| Datasheet: | IXFN27N120SK Datasheet (PDF) |
| Technology | Silicon Carbide (SiC) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | - |
| Rds On (Max) @ Id, Vgs | - |
| Vgs(th) (Max) @ Id | - |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Power - Max | - |
| Operating Temperature | - |
| Mounting Type | Chassis Mount |
| Package / Case | SOT-227-4, miniBLOC |
| Supplier Device Package | SOT-227B |
| Packaging | Tube |
| Standard Pack Qty | 10 |
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 0 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| USHTS | 8541290065 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
IXFN27N120SK is a sic mosfets part produced by IXYS for use across a range of applications. Notable characteristics of this part include technology: Silicon Carbide (SiC), configuration: 2 N-Channel (Dual), FET feature: -, drain to source voltage: 1200V (1.2kV), current, continuous drain (id) @ 25°C: - and rds on (max) @ id, vgs: -. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Order IXFN27N120SK from Simplytronix for authenticated stock and same-day order processing.
