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IXSH100N65L2KHV IXYS
*For representation only.

IXSH100N65L2KHV

Mfr. No: IXSH100N65L2KHV
Mfr.: IXYS
Category: SiC MOSFETs
Description: SiC MOSFETs 650V 25mohm (100A a. 25C) SiC MOSFET in TO247-4L
Lifecycle: Active
Datasheet: IXSH100N65L2KHV Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 99A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Rds On (Max) @ Id, Vgs 33mOhm @ 40A, 18V
Vgs(th) (Max) @ Id 4.5V @ 12mA
Gate Charge (Qg) (Max) @ Vgs 125 nC @ 18 V
Vgs (Max) +20V, -5V
Input Capacitance (Ciss) (Max) @ Vds 3090 pF @ 600 V
FET Feature -
Power Dissipation (Max) 454W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-247-4L
Package / Case TO-247-4
📦 Product Attributes
Packaging Tube
Standard Pack Qty 450
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
10,811
Units In Stock
📦 Tube
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🔑 Key Specifications
Category SiC MOSFETs
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 189 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

IXSH100N65L2KHV is a sic mosfets component manufactured by IXYS. Notable characteristics of this part include FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 650 V, current, continuous drain (id) @ 25°C: 99A (Tc), drive voltage: 15V, 18V and rds on (max) @ id, vgs: 33mOhm @ 40A, 18V. This part has a typical lead time of 189 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix offers IXSH100N65L2KHV in stock, verified authentic and ready for same-day dispatch.

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