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IXSJ25N120R1 IXYS
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IXSJ25N120R1

Mfr. No: IXSJ25N120R1
Mfr.: IXYS
Category: SiC MOSFETs
Description: SiC MOSFETs 1200V 62mohm (25A a. 25C) SiC MOSFET in isolated TO247-3L
Lifecycle: Active
Datasheet: IXSJ25N120R1 Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 81mOhm @ 12A, 18V
Vgs(th) (Max) @ Id 4.8V @ 5.3mA
Gate Charge (Qg) (Max) @ Vgs 52 nC @ 18 V
Vgs (Max) +21V, -4V
Input Capacitance (Ciss) (Max) @ Vds 1435 pF @ 800 V
FET Feature -
Power Dissipation (Max) 75.3W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package ISO247-3L
Package / Case TO-247-3
📦 Product Attributes
Packaging Tube
Standard Pack Qty 30
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
12,519
Units In Stock
📦 Tube
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🔑 Key Specifications
Category SiC MOSFETs
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 245 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

IXSJ25N120R1 is a sic mosfets part produced by IXYS for use across a range of applications. Among its key specs are FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1200 V, current, continuous drain (id) @ 25°C: 28A (Tc), drive voltage: 18V and rds on (max) @ id, vgs: 81mOhm @ 12A, 18V. This part has a typical lead time of 245 Days from factory and ships with a full manufacturer datasheet available for download. Order IXSJ25N120R1 from Simplytronix for authenticated stock and same-day order processing.

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