| Mfr. No: | IXSJ25N120R1 |
| Mfr.: | IXYS |
| Category: | SiC MOSFETs |
| Description: | SiC MOSFETs 1200V 62mohm (25A a. 25C) SiC MOSFET in isolated TO247-3L |
| Lifecycle: | Active |
| Datasheet: | IXSJ25N120R1 Datasheet (PDF) |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 28A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Rds On (Max) @ Id, Vgs | 81mOhm @ 12A, 18V |
| Vgs(th) (Max) @ Id | 4.8V @ 5.3mA |
| Gate Charge (Qg) (Max) @ Vgs | 52 nC @ 18 V |
| Vgs (Max) | +21V, -4V |
| Input Capacitance (Ciss) (Max) @ Vds | 1435 pF @ 800 V |
| FET Feature | - |
| Power Dissipation (Max) | 75.3W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Supplier Device Package | ISO247-3L |
| Package / Case | TO-247-3 |
| Packaging | Tube |
| Standard Pack Qty | 30 |
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 245 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
IXSJ25N120R1 is a sic mosfets part produced by IXYS for use across a range of applications. Among its key specs are FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1200 V, current, continuous drain (id) @ 25°C: 28A (Tc), drive voltage: 18V and rds on (max) @ id, vgs: 81mOhm @ 12A, 18V. This part has a typical lead time of 245 Days from factory and ships with a full manufacturer datasheet available for download. Order IXSJ25N120R1 from Simplytronix for authenticated stock and same-day order processing.