*For representation only.
MCB60I1200TZ-TUB
| Mfr. No: | MCB60I1200TZ-TUB |
| Mfr.: | IXYS |
| Category: | SiC MOSFETs |
| Description: | SiC MOSFETs TO268 1.2KV 90A SIC POWER |
| Lifecycle: | Obsolete |
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Specifications
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Rds On (Max) @ Id, Vgs | 34mOhm @ 50A, 20V |
| Vgs(th) (Max) @ Id | 4V @ 15mA |
| Gate Charge (Qg) (Max) @ Vgs | 160 nC @ 20 V |
| Vgs (Max) | +20V, -5V |
| Input Capacitance (Ciss) (Max) @ Vds | 2790 pF @ 1000 V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-268AA (D3Pak-HV) |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
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Product Attributes
| Packaging | Tube |
| Standard Pack Qty | 30 |
7,585
Units In Stock
📦 Tube
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 644 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541290065 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
ℹ
Product Overview
MCB60I1200TZ-TUB is a sic mosfets component manufactured by IXYS. Among its key specs are FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1200 V, current, continuous drain (id) @ 25°C: 90A (Tc), drive voltage: 20V and rds on (max) @ id, vgs: 34mOhm @ 50A, 20V. This part has a typical lead time of 644 Days from factory. Simplytronix offers MCB60I1200TZ-TUB in stock, verified authentic and ready for same-day dispatch.
