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LSIC1MO120E0160 IXYS
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LSIC1MO120E0160

Mfr. No: LSIC1MO120E0160
Mfr.: IXYS
Category: SiC MOSFETs
Description: SiC MOSFETs 1200 V 160 mOhm SiC Mosfet
Lifecycle: Obsolete
Datasheet: LSIC1MO120E0160 Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Rds On (Max) @ Id, Vgs 200mOhm @ 10A, 20V
Vgs(th) (Max) @ Id 4V @ 5mA
Gate Charge (Qg) (Max) @ Vgs 50 nC @ 20 V
Vgs (Max) +22V, -6V
Input Capacitance (Ciss) (Max) @ Vds 890 pF @ 800 V
FET Feature -
Power Dissipation (Max) 125W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-247AD
Package / Case TO-247-3
📦 Product Attributes
Packaging Tube
Standard Pack Qty 450
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
8,292
Units In Stock
📦 Tube
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🔑 Key Specifications
Category SiC MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 203 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
TARIC 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 8541290100
MXHTS 85412999
ECCN EAR99
ℹ Product Overview

IXYS's LSIC1MO120E0160 is a widely used sic mosfets part in electronic designs. Its datasheet lists FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1200 V, current, continuous drain (id) @ 25°C: 20A (Tc), drive voltage: 20V and rds on (max) @ id, vgs: 200mOhm @ 10A, 20V. This part has a typical lead time of 203 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix supplies LSIC1MO120E0160 with same-day shipping and guaranteed authenticity.

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