| Mfr. No: | SICW028N120A4-BP |
| Mfr.: | Micro Commercial Components (MCC) |
| Category: | SiC MOSFETs |
| Description: | SiC MOSFETs |
| Lifecycle: | Active |
| Datasheet: | SICW028N120A4-BP Datasheet (PDF) |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 16V, 20V |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 40A, 20V |
| Vgs(th) (Max) @ Id | 3V @ 15mA |
| Gate Charge (Qg) (Max) @ Vgs | 168 nC @ 18 V |
| Vgs (Max) | +22V, -5V |
| Input Capacitance (Ciss) (Max) @ Vds | 3570 pF @ 1000 V |
| FET Feature | - |
| Power Dissipation (Max) | 375W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-4 |
| Package / Case | TO-247-4 |
| Packaging | Bulk |
| Standard Pack Qty | 1800 |
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 196 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
The SICW028N120A4-BP from Micro Commercial Components (MCC) falls under the sic mosfets category. Notable characteristics of this part include FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1200 V, current, continuous drain (id) @ 25°C: 80A (Tc), drive voltage: 16V, 20V and rds on (max) @ id, vgs: 30mOhm @ 40A, 20V. This part has a typical lead time of 196 Days from factory and ships with a full manufacturer datasheet available for download. SICW028N120A4-BP is available through Simplytronix, sourced and verified for authenticity.