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SICW028N120A4-BP Micro Commercial Components (MCC)
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SICW028N120A4-BP

Mfr. No: SICW028N120A4-BP
Mfr.: Micro Commercial Components (MCC)
Category: SiC MOSFETs
Description: SiC MOSFETs
Lifecycle: Active
Datasheet: SICW028N120A4-BP Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 16V, 20V
Rds On (Max) @ Id, Vgs 30mOhm @ 40A, 20V
Vgs(th) (Max) @ Id 3V @ 15mA
Gate Charge (Qg) (Max) @ Vgs 168 nC @ 18 V
Vgs (Max) +22V, -5V
Input Capacitance (Ciss) (Max) @ Vds 3570 pF @ 1000 V
FET Feature -
Power Dissipation (Max) 375W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-247-4
Package / Case TO-247-4
📦 Product Attributes
Packaging Bulk
Standard Pack Qty 1800
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
8,234
Units In Stock
📦 Bulk
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🔑 Key Specifications
Category SiC MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 196 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

The SICW028N120A4-BP from Micro Commercial Components (MCC) falls under the sic mosfets category. Notable characteristics of this part include FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1200 V, current, continuous drain (id) @ 25°C: 80A (Tc), drive voltage: 16V, 20V and rds on (max) @ id, vgs: 30mOhm @ 40A, 20V. This part has a typical lead time of 196 Days from factory and ships with a full manufacturer datasheet available for download. SICW028N120A4-BP is available through Simplytronix, sourced and verified for authenticity.

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