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SICW080N120Y-BP Micro Commercial Components (MCC)
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SICW080N120Y-BP

Mfr. No: SICW080N120Y-BP
Mfr.: Micro Commercial Components (MCC)
Category: SiC MOSFETs
Description: SiC MOSFETs
Lifecycle: Active
Datasheet: SICW080N120Y-BP Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 38A
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 85mOhm @ 20A, 18V
Vgs(th) (Max) @ Id 3.6V @ 5mA
Gate Charge (Qg) (Max) @ Vgs 41 nC @ 18 V
Vgs (Max) +22V, -8V
Input Capacitance (Ciss) (Max) @ Vds 890 pF @ 1000 V
FET Feature -
Power Dissipation (Max) 220W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-247-3
Package / Case TO-247-3
📦 Product Attributes
Packaging Bulk
Standard Pack Qty 1800
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
8,899
Units In Stock
📦 Bulk
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🔑 Key Specifications
Category SiC MOSFETs
RoHS RoHS Compliant By Exemption
Lifecycle
Lead Time 154 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

The SICW080N120Y-BP from Micro Commercial Components (MCC) falls under the sic mosfets category. This part is specified with FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1200 V, current, continuous drain (id) @ 25°C: 38A, drive voltage: 18V and rds on (max) @ id, vgs: 85mOhm @ 20A, 18V. This part has a typical lead time of 154 Days from factory and ships with a full manufacturer datasheet available for download. SICW080N120Y-BP is available through Simplytronix, sourced and verified for authenticity.

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