Search Products

Menu
SICW040N120H-BP Micro Commercial Components (MCC)
*For representation only.

SICW040N120H-BP

Mfr. No: SICW040N120H-BP
Mfr.: Micro Commercial Components (MCC)
Category: SiC MOSFETs
Description: SiC MOSFETs SiC MOSFET,TO-247AB
Lifecycle: Active
Datasheet: SICW040N120H-BP Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 62A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Rds On (Max) @ Id, Vgs 52mOhm @ 30A, 20V
Vgs(th) (Max) @ Id 4.5V @ 40mA
Gate Charge (Qg) (Max) @ Vgs 229 nC @ 20 V
Vgs (Max) +25V, -10V
Input Capacitance (Ciss) (Max) @ Vds 3619 pF @ 800 V
FET Feature -
Power Dissipation (Max) 326W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-247AB
Package / Case TO-247-3
📦 Product Attributes
Packaging Bulk
Standard Pack Qty 1800
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
11,857
Units In Stock
📦 Bulk
Request a Quote →
  • 24-hour response
  • Global shipping
  • Genuine parts guaranteed
🔑 Key Specifications
Category SiC MOSFETs
RoHS RoHS Compliant
Lifecycle Factory Special Order
Lead Time 252 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

SICW040N120H-BP is a sic mosfets component manufactured by Micro Commercial Components (MCC). Its datasheet lists FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1200 V, current, continuous drain (id) @ 25°C: 62A (Tc), drive voltage: 20V and rds on (max) @ id, vgs: 52mOhm @ 30A, 20V. This part has a typical lead time of 252 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix offers SICW040N120H-BP in stock, verified authentic and ready for same-day dispatch.

Similar Products