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Jan2N930 Microchip / Microsemi
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Jan2N930

Mfr. No: Jan2N930
Mfr.: Microchip / Microsemi
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT 45V 30mA 300mW NPN Small-Signal BJT THT
Lifecycle: Active
Datasheet: Jan2N930 Datasheet (PDF)
⚙ Specifications
Transistor Type NPN
Current - Collector (Ic) (Max) 30 mA
Voltage - Collector Emitter Breakdown (Max) 45 V
Vce Saturation (Max) @ Ib, Ic 1V @ 500µA, 10mA
Current - Collector Cutoff (Max) 2nA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10µA, 5V
Power - Max 300 mW
Frequency - Transition -
Operating Temperature -55°C ~ 200°C (TJ)
Grade Military
Qualification MIL-PRF-19500/253
Mounting Type Through Hole
Package / Case TO-206AA, TO-18-3 Metal Can
Supplier Device Package TO-18
📦 Product Attributes
Packaging Bulk
Standard Pack Qty 1
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
7,619
Units In Stock
📦 Bulk
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🔑 Key Specifications
Category Bipolar Transistors - BJT
RoHS No
Lifecycle
Lead Time 336 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541210000
CAHTS 8541210000
USHTS 8541210095
JPHTS 8541210101
KRHTS 8541219000
TARIC 8541210000
MXHTS 85412101
ECCN EAR99
ℹ Product Overview

Manufactured by Microchip / Microsemi, the Jan2N930 is classified under bipolar transistors - bjt. It features transistor type: NPN, current, collector (ic): 30 mA, voltage, collector emitter breakdown: 45 V, vce saturation (max) @ ib, ic: 1V @ 500µA, 10mA, current, collector cutoff: 2nA and DC current gain (hfe) (min) @ ic, vce: 100 @ 10µA, 5V. This part has a typical lead time of 336 Days from factory and ships with a full manufacturer datasheet available for download. Get Jan2N930 from Simplytronix, shipped same day with a genuine parts guarantee.

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