| Mfr. No: | JANSD2N3810U/TR |
| Mfr.: | Microchip / Microsemi |
| Category: | Bipolar Transistors - BJT |
| Description: | Bipolar Transistors - BJT 60V 50mA 350mW Dual RH Small-Signal BJT SQ SMT TR |
| Lifecycle: | Active |
| Datasheet: | JANSD2N3810U/TR Datasheet (PDF) |
| Transistor Type | 2 PNP (Dual) |
| Current - Collector (Ic) (Max) | 50mA |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 100µA, 1mA |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 150 @ 1mA, 5V |
| Power - Max | 350mW |
| Frequency - Transition | - |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Grade | Military |
| Qualification | MIL-PRF-19500/336 |
| Mounting Type | Surface Mount |
| Package / Case | 6-SMD, No Lead |
| Supplier Device Package | 6-SMD |
| Packaging | Bulk |
| Standard Pack Qty | 1 |
| Category | Bipolar Transistors - BJT |
| RoHS | No |
| Lifecycle | |
| Lead Time | 315 Days (from factory) |
| Country / Standard | Code |
|---|---|
| USHTS | 8541290065 |
| TARIC | 8541290000 |
| ECCN | EAR99 |
As a bipolar transistors - bjt component, the JANSD2N3810U/TR is manufactured and supplied by Microchip / Microsemi. Key specifications include transistor type: 2 PNP (Dual), current, collector (ic): 50mA, voltage, collector emitter breakdown: 60V, vce saturation (max) @ ib, ic: 250mV @ 100µA, 1mA, current, collector cutoff: 10µA (ICBO) and DC current gain (hfe) (min) @ ic, vce: 150 @ 1mA, 5V. This part has a typical lead time of 315 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries JANSD2N3810U/TR in stock, backed by a genuine parts guarantee and quick dispatch.
