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Jantxv2N2222AUA

Mfr. No: Jantxv2N2222AUA
Mfr.: Microchip / Microsemi
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT 40V 800mA 500mW Small-Signal BJT SMT
Datasheet: Jantxv2N2222AUA Datasheet (PDF)
⚙ Specifications
Transistor Type NPN
Current - Collector (Ic) (Max) 800 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA
Current - Collector Cutoff (Max) 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V
Power - Max 650 mW
Frequency - Transition -
Operating Temperature -65°C ~ 200°C (TJ)
Grade Military
Qualification MIL-PRF-19500/255
Mounting Type Surface Mount
Package / Case 4-SMD, No Lead
Supplier Device Package 4-SMD
📦 Product Attributes
Packaging Waffle
Standard Pack Qty 1
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
8,917
Units In Stock
📦 Waffle
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🔑 Key Specifications
Category Bipolar Transistors - BJT
RoHS No
Lifecycle
Lead Time 336 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541210000
CAHTS 8541210000
USHTS 8541210095
JPHTS 8541210101
KRHTS 8541219000
TARIC 8541210000
MXHTS 85412101
ECCN EAR99
ℹ Product Overview

Jantxv2N2222AUA is a bipolar transistors - bjt component manufactured by Microchip / Microsemi. Technical specifications for this part include transistor type: NPN, current, collector (ic): 800 mA, voltage, collector emitter breakdown: 50 V, vce saturation (max) @ ib, ic: 1V @ 50mA, 500mA, current, collector cutoff: 50nA and DC current gain (hfe) (min) @ ic, vce: 100 @ 150mA, 10V. This part has a typical lead time of 336 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix offers Jantxv2N2222AUA in stock, verified authentic and ready for same-day dispatch.

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