*For representation only.
NSVF4015SG4T1G
| Mfr. No: | NSVF4015SG4T1G |
| Mfr.: | onsemi |
| Category: | RF Bipolar Transistors |
| Description: | RF Bipolar Transistors BIP NPN 100MA 12V FT=10G |
| Lifecycle: | Active |
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Specifications
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| Frequency - Transition | 10GHz |
| Noise Figure (dB Typ @ f) | 1.2dB @ 1GHz |
| Gain | 17dB |
| Power - Max | 450mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 50mA, 5V |
| Current - Collector (Ic) (Max) | 100mA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Package / Case | 4-SMD, Flat Leads |
| Supplier Device Package | SC-82FL/MCPH4 |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
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Alternate / Replacement Parts
| Alternate Packaging | |
| Suggested Replacement | NSVF4009SG4T1G |
8,616
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | RF Bipolar Transistors |
| RoHS | RoHS Compliant |
| Lifecycle | End of Life |
| Lead Time | 365 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541210000 |
| CAHTS | 8541210000 |
| USHTS | 8541210095 |
| JPHTS | 854121000 |
| TARIC | 8541210000 |
| MXHTS | 8541210100 |
| ECCN | EAR99 |
ℹ
Product Overview
onsemi's NSVF4015SG4T1G is a widely used rf bipolar transistors part in electronic designs. This component is defined by transistor type: NPN, voltage, collector emitter breakdown: 12V, frequency, transition: 10GHz, noise figure: 1.2dB @ 1GHz, gain: 17dB and power, max: 450mW. This part has a typical lead time of 365 Days from factory. Simplytronix supplies NSVF4015SG4T1G with same-day shipping and guaranteed authenticity.
