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TP65H150G4LSG Renesas Electronics
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TP65H150G4LSG

Mfr. No: TP65H150G4LSG
Mfr.: Renesas Electronics
Category: GaN FETs
Description: GaN FETs GAN FET 650V 13A TO220
Lifecycle: Active
Datasheet: TP65H150G4LSG Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 180mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id 4.8V @ 500µA
Gate Charge (Qg) (Max) @ Vgs 8 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 598 pF @ 400 V
FET Feature -
Power Dissipation (Max) 52W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 3-PQFN (8x8)
Package / Case 3-PowerTDFN
📦 Product Attributes
Packaging Reel
Standard Pack Qty 1500
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
10,758
Units In Stock
📦 Reel
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🔑 Key Specifications
Category GaN FETs
RoHS RoHS Compliant
Lifecycle Restricted Availability
Lead Time 0 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

The TP65H150G4LSG, made by Renesas Electronics, belongs to the gan fets product category. Its datasheet lists FET type: N-Channel, technology: GaNFET (Gallium Nitride), drain to source voltage: 650 V, current, continuous drain (id) @ 25°C: 13A (Tc), drive voltage: 10V and rds on (max) @ id, vgs: 180mOhm @ 8.5A, 10V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks TP65H150G4LSG for same-day shipping with genuine parts guaranteed.

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