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TP65H300G4LSG-TR Renesas Electronics
*For representation only.

TP65H300G4LSG-TR

Mfr. No: TP65H300G4LSG-TR
Mfr.: Renesas Electronics
Category: GaN FETs
Description: GaN FETs 650V, 240mOhm
Lifecycle: Discontinued
Datasheet: TP65H300G4LSG-TR Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 8V
Rds On (Max) @ Id, Vgs 312mOhm @ 5A, 8V
Vgs(th) (Max) @ Id 2.6V @ 500µA
Gate Charge (Qg) (Max) @ Vgs 9.6 nC @ 8 V
Vgs (Max) ±18V
Input Capacitance (Ciss) (Max) @ Vds 760 pF @ 400 V
FET Feature -
Power Dissipation (Max) 21W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 3-PQFN (8x8)
Package / Case 3-PowerDFN
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging TP65H070LSG
Suggested Replacement
13,114
Units In Stock
📦 Reel
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🔑 Key Specifications
Category GaN FETs
RoHS RoHS Compliant
Lifecycle Restricted Availability
Lead Time 0 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

The TP65H300G4LSG-TR from Renesas Electronics falls under the gan fets category. It features FET type: N-Channel, technology: GaNFET (Gallium Nitride), drain to source voltage: 650 V, current, continuous drain (id) @ 25°C: 6.5A (Tc), drive voltage: 8V and rds on (max) @ id, vgs: 312mOhm @ 5A, 8V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. TP65H300G4LSG-TR is available through Simplytronix, sourced and verified for authenticity.

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