*For representation only.
TP65H300G4LSGB-TR
| Mfr. No: | TP65H300G4LSGB-TR |
| Mfr.: | Renesas Electronics |
| Category: | GaN FETs |
| Description: | GaN FETs GAN FET 650V 6.5A QFN8x8 |
| Lifecycle: | Active |
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Specifications
| FET Type | N-Channel |
| Technology | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 6.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V |
| Rds On (Max) @ Id, Vgs | 312mOhm @ 6.5A, 6V |
| Vgs(th) (Max) @ Id | 2.8V @ 500µA |
| Gate Charge (Qg) (Max) @ Vgs | 8.8 nC @ 10 V |
| Vgs (Max) | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds | 730 pF @ 400 V |
| FET Feature | - |
| Power Dissipation (Max) | 21W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-PQFN (8x8) |
| Package / Case | 8-VDFN Exposed Pad |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
9,771
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | GaN FETs |
| RoHS | RoHS Compliant |
| Lifecycle | Restricted Availability |
| Lead Time | 0 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
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Product Overview
TP65H300G4LSGB-TR is a gan fets part produced by Renesas Electronics for use across a range of applications. Among its key specs are FET type: N-Channel, technology: GaNFET (Gallium Nitride), drain to source voltage: 650 V, current, continuous drain (id) @ 25°C: 6.5A (Tc), drive voltage: 6V and rds on (max) @ id, vgs: 312mOhm @ 6.5A, 6V. This part has a typical lead time of 0 Days from factory. Order TP65H300G4LSGB-TR from Simplytronix for authenticated stock and same-day order processing.
