| Mfr. No: | TP65H030G4PWS |
| Mfr.: | Renesas Electronics |
| Category: | GaN FETs |
| Description: | GaN FETs 650V, 30mohm GaN FET in TO247-3L |
| Lifecycle: | Active |
| Datasheet: | TP65H030G4PWS Datasheet (PDF) |
| FET Type | N-Channel |
| Technology | GaNFET (Cascode Gallium Nitride FET) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 55.7A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Rds On (Max) @ Id, Vgs | 41mOhm @ 30A, 12V |
| Vgs(th) (Max) @ Id | 4.8V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 24.5 nC @ 12 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 400 V |
| FET Feature | - |
| Power Dissipation (Max) | 192W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-3 |
| Package / Case | TO-247-3 |
| Packaging | Tube |
| Standard Pack Qty | 240 |
| Category | GaN FETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 126 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
The TP65H030G4PWS from Renesas Electronics falls under the gan fets category. Key specifications include FET type: N-Channel, technology: GaNFET (Cascode Gallium Nitride FET), drain to source voltage: 650 V, current, continuous drain (id) @ 25°C: 55.7A (Tc), drive voltage: 12V and rds on (max) @ id, vgs: 41mOhm @ 30A, 12V. This part has a typical lead time of 126 Days from factory and ships with a full manufacturer datasheet available for download. TP65H030G4PWS is available through Simplytronix, sourced and verified for authenticity.