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| Mfr. No: | TP65H070G4LSGBA-TR |
| Mfr.: | Renesas Electronics |
| Category: | GaN FETs |
| Description: | GaN FETs 650V, 70mohm GaN FET in 8x8 PQFN |
| Lifecycle: | Active |
| FET Type | N-Channel |
| Technology | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 29A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 16A, 10V |
| Vgs(th) (Max) @ Id | 4.6V @ 700µA |
| Gate Charge (Qg) (Max) @ Vgs | 8.4 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 600 pF @ 400 V |
| FET Feature | - |
| Power Dissipation (Max) | 96W (Tc) |
| Operating Temperature | -55°C ~ 150°C |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-PQFN (8x8) |
| Package / Case | 8-VDFN Exposed Pad |
| Packaging | Reel |
| Standard Pack Qty | 3000 |
| Category | GaN FETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 126 Days (from factory) |
Renesas Electronics's TP65H070G4LSGBA-TR is a widely used gan fets part in electronic designs. Key specifications include FET type: N-Channel, technology: GaNFET (Gallium Nitride), drain to source voltage: 650 V, current, continuous drain (id) @ 25°C: 29A (Tc), drive voltage: 10V and rds on (max) @ id, vgs: 85mOhm @ 16A, 10V. This part has a typical lead time of 126 Days from factory. Simplytronix supplies TP65H070G4LSGBA-TR with same-day shipping and guaranteed authenticity.
