*For representation only.
TP65H100G4LSGB-TR
| Mfr. No: | TP65H100G4LSGB-TR |
| Mfr.: | Renesas Electronics |
| Category: | GaN FETs |
| Description: | GaN FETs 650V, 100mohm GaN FET in 8x8 PQFN |
| Lifecycle: | Active |
| Datasheet: | TP65H100G4LSGB-TR Datasheet (PDF) |
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Specifications
| FET Type | N-Channel |
| Technology | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 18.9A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 12A, 10V |
| Vgs(th) (Max) @ Id | 4.1V @ 1.8mA |
| Gate Charge (Qg) (Max) @ Vgs | 14.4 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 818 pF @ 400 V |
| FET Feature | - |
| Power Dissipation (Max) | 65.8W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-PQFN (8x8) |
| Package / Case | 8-VDFN Exposed Pad |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
11,728
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | GaN FETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 126 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| ECCN | EAR99 |
ℹ
Product Overview
As a gan fets component, the TP65H100G4LSGB-TR is manufactured and supplied by Renesas Electronics. Among its key specs are FET type: N-Channel, technology: GaNFET (Gallium Nitride), drain to source voltage: 650 V, current, continuous drain (id) @ 25°C: 18.9A (Tc), drive voltage: 10V and rds on (max) @ id, vgs: 110mOhm @ 12A, 10V. This part has a typical lead time of 126 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries TP65H100G4LSGB-TR in stock, backed by a genuine parts guarantee and quick dispatch.
