*For representation only.
TP65H150G4PS
| Mfr. No: | TP65H150G4PS |
| Mfr.: | Renesas Electronics |
| Category: | GaN FETs |
| Description: | GaN FETs 650V, 150mohm GaN FET in TO220 |
| Lifecycle: | Active |
⚙
Specifications
| FET Type | N-Channel |
| Technology | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 8.5A, 10V |
| Vgs(th) (Max) @ Id | 4.8V @ 500µA |
| Gate Charge (Qg) (Max) @ Vgs | 8 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 598 pF @ 400 V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
📦
Product Attributes
| Packaging | Tube |
| Standard Pack Qty | 1000 |
4,643
Units In Stock
📦 Tube
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | GaN FETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 126 Days (from factory) |
📄
Documentation
Datasheet not available
🌐
Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
ℹ
Product Overview
Renesas Electronics manufactures the TP65H150G4PS, a gan fets part used in electronic assemblies. Technical specifications for this part include FET type: N-Channel, technology: GaNFET (Gallium Nitride), drain to source voltage: 650 V, current, continuous drain (id) @ 25°C: 16A (Tc), drive voltage: 10V and rds on (max) @ id, vgs: 180mOhm @ 8.5A, 10V. This part has a typical lead time of 126 Days from factory. You can source TP65H150G4PS through Simplytronix, with fast shipping and verified authenticity.
