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TP70H130G4PLSG-TR Renesas Electronics
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TP70H130G4PLSG-TR

Mfr. No: TP70H130G4PLSG-TR
Mfr.: Renesas Electronics
Category: GaN FETs
Description: GaN FETs 700V, 130mohm GaN FET in 8x8 PQFN PP
Datasheet: TP70H130G4PLSG-TR Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 700 V
Current - Continuous Drain (Id) @ 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 9V
Rds On (Max) @ Id, Vgs 163mOhm @ 4A, 9V
Vgs(th) (Max) @ Id 4.8V @ 500µA
Gate Charge (Qg) (Max) @ Vgs 10.7 nC @ 9 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 567 pF @ 400 V
FET Feature -
Power Dissipation (Max) 69.4W (Tc)
Operating Temperature -55°C ~ 150°C
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 8-PQFN (8x8)
Package / Case 8-VDFN Exposed Pad
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
11,629
Units In Stock
📦 Reel
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🔑 Key Specifications
Category GaN FETs
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 126 Days (from factory)
📄 Documentation
⬇ Download Datasheet
ℹ Product Overview

As a gan fets component, the TP70H130G4PLSG-TR is manufactured and supplied by Renesas Electronics. Key specifications include FET type: N-Channel, technology: GaNFET (Gallium Nitride), drain to source voltage: 700 V, current, continuous drain (id) @ 25°C: 16A (Tc), drive voltage: 9V and rds on (max) @ id, vgs: 163mOhm @ 4A, 9V. This part has a typical lead time of 126 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries TP70H130G4PLSG-TR in stock, backed by a genuine parts guarantee and quick dispatch.

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