*For representation only.
TP70H130G4PPS
| Mfr. No: | TP70H130G4PPS |
| Mfr.: | Renesas Electronics |
| Category: | GaN FETs |
| Description: | GaN FETs 700V, 130mohm GaN FET in TO-220 |
| Lifecycle: | Active |
| Datasheet: | TP70H130G4PPS Datasheet (PDF) |
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Specifications
| FET Type | N-Channel |
| Technology | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 700 V |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 9V |
| Rds On (Max) @ Id, Vgs | 163mOhm @ 4A, 9V |
| Vgs(th) (Max) @ Id | 4.8V @ 500µA |
| Gate Charge (Qg) (Max) @ Vgs | 10.7 nC @ 9 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 567 pF @ 400 V |
| FET Feature | - |
| Power Dissipation (Max) | 69.4W (Tc) |
| Operating Temperature | -55°C ~ 150°C |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220-3 |
| Package / Case | TO-220-3 |
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Product Attributes
| Packaging | Tube |
| Standard Pack Qty | 1250 |
10,370
Units In Stock
📦 Tube
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | GaN FETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 126 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Product Overview
Renesas Electronics manufactures the TP70H130G4PPS, a gan fets part used in electronic assemblies. This part is specified with FET type: N-Channel, technology: GaNFET (Gallium Nitride), drain to source voltage: 700 V, current, continuous drain (id) @ 25°C: 16A (Tc), drive voltage: 9V and rds on (max) @ id, vgs: 163mOhm @ 4A, 9V. This part has a typical lead time of 126 Days from factory and ships with a full manufacturer datasheet available for download. You can source TP70H130G4PPS through Simplytronix, with fast shipping and verified authenticity.
