*For representation only.
TP70H300G4JSGB-TR
| Mfr. No: | TP70H300G4JSGB-TR |
| Mfr.: | Renesas Electronics |
| Category: | GaN FETs |
| Description: | GaN FETs 700V, 300mohm GaN FET in 5x6 PQFN |
| Lifecycle: | Active |
| Datasheet: | TP70H300G4JSGB-TR Datasheet (PDF) |
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Specifications
| FET Type | N-Channel |
| Technology | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 700 V |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V |
| Rds On (Max) @ Id, Vgs | 312mOhm @ 5A, 6V |
| Vgs(th) (Max) @ Id | 2.5V @ 500µA |
| Gate Charge (Qg) (Max) @ Vgs | 5.4 nC @ 6 V |
| Vgs (Max) | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds | 487 pF @ 400 V |
| FET Feature | - |
| Power Dissipation (Max) | 31.2W (Tc) |
| Operating Temperature | -55°C ~ 150°C |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-PDFN (5x6) |
| Package / Case | 8-PowerTDFN |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 5000 |
4,058
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | GaN FETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 126 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541497040 |
| ECCN | EAR99 |
ℹ
Product Overview
The TP70H300G4JSGB-TR, made by Renesas Electronics, belongs to the gan fets product category. This component is defined by FET type: N-Channel, technology: GaNFET (Gallium Nitride), drain to source voltage: 700 V, current, continuous drain (id) @ 25°C: 8A (Tc), drive voltage: 6V and rds on (max) @ id, vgs: 312mOhm @ 5A, 6V. This part has a typical lead time of 126 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks TP70H300G4JSGB-TR for same-day shipping with genuine parts guaranteed.
